BCR166F - Infineon Technologies AG

BCR166F PNP Silicon Digital Transistor

BCR166.../SEMB13 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1 = 4.7kΩ , R2 = 47kΩ ) BCR166/F/L3 BCR166T/W C 3 SEMB13 C1 6 B2 5 E2 4 R1 R1 R2 TR2 R1 R2 TR1 R2 1 B 2 E EHA07183 1 E1 2 B1 3 C2 EHA07173 Type BCR166 BCR166F BCR166L3 BCR166T BCR166W SEMB13 Marking WTs WT.

Features

culation of R thJA please refer to Application Note Thermal Resistance Symbol VCEO VCBO VEBO Vi(on) IC Ptot Value 50 50 5 15 100 200 250 250 250 250 250 150 -65 ... 150 Value ≤ 240 ≤ 90 ≤ 60 ≤ 165 ≤ 105 ≤ 300 Unit V mA mW Tj Tstg Symbol RthJS °C Unit K/W 2 Jun-14-2004 BCR166.../SEMB13 Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO 50 V IC = 100 µA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 V(BR)CBO I CBO I EBO h FE VCEsat Vi(off) Vi(on) R.