Passivated high commutation triacs in a plastic envelope intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. These devices will commutate the full rated ms current at the maximum rated junction temperature without the aid of a snubber. Symbol Simplified outline T2 T1 Pin 1 2 3 TAB G 1 23 TO-220F Description Mai.
Blocking voltage to 600 V On-state RMS current to 12 A SYMBOL VDRM IT RMS ITSM PARAMETER Repetitive peak off-state voltages BCR12PM-8 BCR12PM-12 RMS on-state current full sine wave Non-repetitive peak on-state current (full cycle,Tj initial=25 ) Value 400 600 12 120 Unit V A A SYMBOL PARAMETER Rth (j-c) Junction to case Rth(j-a) Junction to ambient CONDITIONS Value TYP - - - MAX UNIT 3.5 /W - - - 60 /W http://www.haopin.com 1/5 TM HPM HAOPIN MICROELECTRONICS CO.,LTD. BCR12PM Three quadrant triacs Limiting values in accordance with the Maximum system(IEC 134) SYMBO.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BCR12PM-12 |
HAOPIN |
Three quadrant triac | |
2 | BCR12PM-12LA |
INCHANGE |
Thyristor | |
3 | BCR12PM-12LA |
Renesas |
Triac | |
4 | BCR12PM-12LB |
Renesas |
Triac | |
5 | BCR12PM-12LC |
Renesas |
Triac | |
6 | BCR12PM-12LG |
Renesas Technology |
Triac | |
7 | BCR12PM-12LG |
INCHANGE |
Thyristor | |
8 | BCR12PM-14 |
Mitsubishi Electric Semiconductor |
Triac | |
9 | BCR12PM-14L |
Renesas |
Triac | |
10 | BCR12PM-14LG |
Renesas |
Triac | |
11 | BCR12PM-14LG |
INCHANGE |
Thyristor | |
12 | BCR12PM |
Mitsubishi Electric Semiconductor |
TRIAC |