·With TO-220F packaging ·Operating in 3 quadrants ·High commutation capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Solid state relays;heating and cooking appliances ·Switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDRM VRRM IT(RSM) Repetitive peak off-state voltage R.
th (j-c) Gate-trigger voltage Junction to case IT=20A Ⅰ VD =6V;RL=6Ω;RG=330Ω Ⅱ Ⅲ VD =6V;RL=6Ω;RG=330Ω Half cycle MIN MAX UNIT 2000 μA 1.5 V 30 30 mA 30 1.5 V 4.0 ℃/W isc website:www.iscsemi.com isc & iscsemi is registered trademark isc Thyristors INCHANGE Semiconductor BCR12PM-14LG NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not d.
BCR12PM-14LG Triac Medium Power Use Features IT (RMS) : 12 A VDRM : 800 V (Tj = 125C) IFGTI, IRGTI, IRGT III : 30.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BCR12PM-14L |
Renesas |
Triac | |
2 | BCR12PM-14 |
Mitsubishi Electric Semiconductor |
Triac | |
3 | BCR12PM-12 |
HAOPIN |
Three quadrant triac | |
4 | BCR12PM-12LA |
INCHANGE |
Thyristor | |
5 | BCR12PM-12LA |
Renesas |
Triac | |
6 | BCR12PM-12LB |
Renesas |
Triac | |
7 | BCR12PM-12LC |
Renesas |
Triac | |
8 | BCR12PM-12LG |
Renesas Technology |
Triac | |
9 | BCR12PM-12LG |
INCHANGE |
Thyristor | |
10 | BCR12PM-8 |
HAOPIN |
Three quadrant triac | |
11 | BCR12PM |
Mitsubishi Electric Semiconductor |
TRIAC | |
12 | BCR12PM |
Powerex Power Semiconductors |
TRIAC |