BCR 10PN NPN/PNP Silicon Digital Tansistor Array • Switching circuit, inverter, interface circuit, drive circuit • Two (galvanic) internal isolated NPN/PNP Transistor in one package • Built in bias resistor (R1=10kΩ, R2=10kΩ) Tape loading orientation Type BCR 10PN Marking Ordering Code Pin Configuration W1s Package Q62702-C2411 1=E1 2= B1 3=C2 4=E2 5=B2 .
tics Collector-emitter breakdown voltage Values typ. max. Unit V(BR)CEO 50 10 1 - V IC = 100 µA, IB = 0 Collector-base breakdown voltage V(BR)CBO 50 IC = 10 µA, IB = 0 Collector cutoff current ICBO 100 nA mA 0.75 30 V 0.3 1.5 2.5 13 1.1 kΩ - VCB = 40 V, IE = 0 Emitter cutoff current IEBO hFE VCEsat Vi(off) 0.8 VEB = 10 V, IC = 0 DC current gain IC = 5 mA, VCE = 5 V Collector-emitter saturation voltage 1) IC = 10 mA, IB = 0.5 mA Input off voltage IC = 100 µA, VCE = 5 V Input on Voltage Vi(on) 1 IC = 2 mA, VCE = 0.3 V Input resistor Resistor ratio AC Characteristics for NPN Type T.
BCR10PN NPN/PNP Silicon Digital Transistor Array 4 Switching circuit, inverter, interface circuit, 5 6 driver circu.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BCR10PM |
Mitsubishi Electric Semiconductor |
TRIAC | |
2 | BCR10PM |
Powerex Power Semiconductors |
Triac | |
3 | BCR10PM |
INCHANGE |
Triacs | |
4 | BCR10PM-12LA |
Renesas Technology |
Triac | |
5 | BCR10PM-12LG |
Renesas Technology |
Triac | |
6 | BCR100 |
BWTEK |
Raman Cuvette Holder | |
7 | BCR100 |
Bartco |
remote driver LED fixture | |
8 | BCR1002A3 |
CYStech Electronics |
PNPN SCR | |
9 | BCR1002N3 |
CYStech Electronics |
PNPN SCR | |
10 | BCR1003A3 |
CYStech Electronics |
PNPN SCR | |
11 | BCR101 |
Infineon Technologies AG |
NPN Silicon Digital Transistor | |
12 | BCR101F |
Infineon Technologies AG |
NPN Silicon Digital Transistor |