BCR10PN |
Part Number | BCR10PN |
Manufacturer | Siemens Semiconductor Group |
Description | BCR 10PN NPN/PNP Silicon Digital Tansistor Array • Switching circuit, inverter, interface circuit, drive circuit • Two (galvanic) internal isolated NPN/PNP Transistor in one package • Built in bias re... |
Features |
tics Collector-emitter breakdown voltage Values typ. max. Unit
V(BR)CEO
50 10 1 -
V
IC = 100 µA, IB = 0
Collector-base breakdown voltage
V(BR)CBO
50
IC = 10 µA, IB = 0
Collector cutoff current
ICBO
100
nA mA 0.75 30 V 0.3 1.5 2.5 13 1.1 kΩ -
VCB = 40 V, IE = 0
Emitter cutoff current
IEBO hFE VCEsat Vi(off)
0.8
VEB = 10 V, IC = 0
DC current gain
IC = 5 mA, VCE = 5 V
Collector-emitter saturation voltage 1)
IC = 10 mA, IB = 0.5 mA
Input off voltage
IC = 100 µA, VCE = 5 V
Input on Voltage
Vi(on)
1
IC = 2 mA, VCE = 0.3 V
Input resistor Resistor ratio AC Characteristics for NPN Type T... |
Document |
BCR10PN Data Sheet
PDF 62.75KB |
Distributor | Stock | Price | Buy |
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---|---|---|---|---|
1 | BCR10PM |
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2 | BCR10PM |
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3 | BCR10PM |
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4 | BCR10PM-12LA |
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5 | BCR10PM-12LG |
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