BC807-40LT1 - Motorola Inc

BC807-40LT1 Transistor

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BC807–16LT1/D General Purpose Transistors PNP Silicon 2 BASE 1 EMITTER Symbol VCEO VCBO VEBO IC Value –45 –50 –5.0 –500 Unit V V V mAdc COLLECTOR 3 BC807-16LT1 BC807-25LT1 BC807-40LT1 3 1 2 MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Coll.

Features

yp Max Unit OFF CHARACTERISTICS Collector
  – Emitter Breakdown Voltage (IC =
  –10 mA) Collector
  – Emitter Breakdown Voltage (VEB = 0, IC =
  –10 µA) Emitter
  – Base Breakdown Voltage (IE =
  –1.0 mA) Collector Cutoff Current (VCB =
  –20 V) (VCB =
  –20 V, TJ = 150°C) 1. FR
  –5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. V(BR)CEO V(BR)CES V(BR)EBO ICBO — — — —
  –100
  –5.0 nA µA
  –45
  –50
  –5.0 — — — — — — V V V Thermal Clad is a trademark of the Bergquist Company. Motorola Small
  –Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1996 1 BC807-16LT1 BC807-25LT1 BC.