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BC807-40LT1 |
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| Part Number | BC807-40LT1 |
| Manufacturer | Motorola Inc |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BC807–16LT1/D General Purpose Transistors PNP Silicon 2 BASE 1 EMITTER Symbol VCEO VCBO VEBO IC Value –45 –50 –5.0 –500 Unit V V V mAdc ... |
| Features |
yp Max Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (IC = –10 mA) Collector – Emitter Breakdown Voltage (VEB = 0, IC = –10 µA) Emitter – Base Breakdown Voltage (IE = –1.0 mA) Collector Cutoff Current (VCB = –20 V) (VCB = –20 V, TJ = 150°C) 1. FR –5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. V(BR)CEO V(BR)CES V(BR)EBO ICBO — — — — –100 –5.0 nA µA –45 –50 –5.0 — — — — — — V V V Thermal Clad is a trademark of the Bergquist Company. Motorola Small –Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1996 1 BC807-16LT1 BC807-25LT1 BC... |
| Document |
 BC807-40LT1 Data Sheet
PDF 90.58KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BC807-40L |
ON Semiconductor |
PNP Silicon Transistor |
|
| 2 | BC807-40L |
nexperia |
500mA PNP Transistor |
|
| 3 | BC807-40LW |
nexperia |
500mA PNP Transistor |
|
| 4 | BC807-40 |
INCHANGE |
PNP Transistor |
|
| 5 | BC807-40 |
NXP |
PNP Transistor |
|