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BC618 Darlington Transistors NPN Silicon Features • These are Pb−Free Devices* MAXIMUM RATINGS Rating Collector −Emitter Voltage Collector −Base Voltage Emitter−Base Voltage Collector Current − Continuous Total Power Dissipation @ TA = 25°C Derate above TA = 25°C Total Power Dissipation @ TA = 25°C Derate above TA = 25°C Operating and Storage Junction Tempe.
• These are Pb−Free Devices
*
MAXIMUM RATINGS Rating
Collector −Emitter Voltage Collector −Base Voltage Emitter−Base Voltage Collector Current − Continuous Total Power Dissipation @ TA = 25°C Derate above TA = 25°C Total Power Dissipation @ TA = 25°C Derate above TA = 25°C Operating and Storage Junction Temperature Range
Symbol Value
Unit
VCEO VCBO VEBO
IC PD
55
Vdc
80
Vdc
12
Vdc
1.0
Adc
625
mW
5.0
mW/°C
PD
1.5
W
12
mW/°C
TJ, Tstg −55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient RqJA
200
°C/W
Thermal Res.
BC618 - NXP
NPN Darlington transistor in a TO-92; SOT54 plastic package. handbook, halfpage BC618 PINNING PIN 1 2 3 emitter base co.
BC618 - Siemens Semiconductor Group
BC 617 BC 618 NPN Silicon Darlington Transistors BC 617 BC 618 High current gain q High collector current q 2 1 3 T.
BC618 - Motorola Inc
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BC618/D Darlington Transistors NPN Silicon COLLECTOR 1 B.
BC618 - Philips
NPN Darlington transistor in a TO-92; SOT54 plastic package. handbook, halfpage BC618 PINNING PIN 1 2 3 emitter base co.
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