BC617 NPN Silicon Darlington Transistors Datasheet

BC617 NPN Silicon Darlington Transistors

BC 617 BC 618 NPN Silicon Darlington Transistors BC 617 BC 618 High current gain q High collector current q 2 1 3 Type BC 617 BC 618 Marking – Ordering Code Q62702-C1137 Q62702-C1138 Pin Configuration 1 2 3 C B E Package1) TO-92 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak co.

Features

-emitter breakdown voltage IC = 10 mA BC 617 BC 618 Collector-base breakdown voltage IC = 100 µA BC 617 BC 618 Emitter-base breakdown voltage IE = 10 µA Collector cutoff current VCB = 40 V VCB = 60 V VCB = 40 V, TA = 150 ˚C VCB = 60 V, TA = 150 ˚C Emitter cutoff current VEB = 4 V DC current gain IC = 100 µA; VCE = 5 V IC = 10 mA; VCE = 5 V1) IC = 200 mA; VCE = 5 V1) IC = 1000 mA; VCE = 5 V1) BC 617 BC 618 BC 617 BC 618 BC 617 BC 618 BC 617 BC 618 VCEsat VBEsat BC 617 BC 618 BC 617 BC 618 IEB0 hFE 4000 2000 10000 4000 20000 10000 10000 4000
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No.	Partie #	Fabricant	Description
1	BC6130	CSR	Fully Qualified Single-chip Bluetooth-v2.1+EDR
2	BC6140	CSR	Fully Qualified Single-chip Bluetooth v2.1 + EDR System
3	BC6145	CSR	Fully Qualified Single-chip Bluetooth v3.0 System
4	BC618	Motorola Inc	Darlington Transistors
5	BC618	ON Semiconductor	Darlington Transistors
6	BC618	NXP	NPN Darlington transistor
7	BC618	Siemens Semiconductor Group	NPN Silicon Darlington Transistors
8	BC618	Philips	NPN Darlington transistor
9	BC635	SEMTECH	NPN Silicon Epitaxial Planar Transistor
10	BC635	CDIL	SILICON PLANAR EPITAXIAL TRANSISTORS
11	BC635	Motorola Inc	High Current Transistors
12	BC635	NXP	NPN medium power transistors

BC617 - Siemens Semiconductor Group

BC617 NPN Silicon Darlington Transistors

Features

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