The BC394 is a silicon planar epitaxial NPN transistor in Jedec TO-18 metal case, designed for general purpose high-voltage and video amplifier applications. The complementary PNP type is the BC393. HIGH VOLTAGE AMPLIFIER INTERNAL SCHEMATIC DIAGRAM TO-18 ABSOLUTE MAXIMUM RATINGS Symbol VCBO VCEO VEBO IC Pto t T stg Tj Parameter Collector-base Voltage (.
E (s at )
*
Collector-base Breakdown Voltage (IE = 0 )
Collector-emitter Breakdown Voltage (IB = 0 )
Emitter-base Breakdown Voltage (IC = 0 )
Collector-emitter Saturation Voltage
VBE ( sat)
* Base-emitter Saturation Voltage
hFE
*
fT C CBO
DC Curent Gain
Transition frequency Collector-base Capacitance
VCB = 100 V VCB = 100 V
IC = 100 µA
IC = 10 mA
IE = 100 µA
IC = 10 mA IC = 50 mA
IC = 10 mA IC = 50 mA IC = 1 mA IC = 10 mA I C = 10 mA
IE = 0 f = 1 MHz
T amb = 150 °C
IB = 1 mA IB = 5 mA IB = 1 mA IB = 5 mA VCE = 10 V VCE = 10 V VCE = 10 V VCB = 10 V
180 180
6
30 50
200 400
750 850 85 100.
Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Power Dissipation @ T.
MAXIMUM RATINGS, Rating Collector-Emitter Voltage Cotlector-Base Voltage Emitter-Base Voltage Collector Current - Contin.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BC393 |
STMicroelectronics |
HIGH VOLTAGE AMPLIFIER | |
2 | BC393 |
Motorola |
HIGH VOLTAGE TRANSISTOR | |
3 | BC393 |
Central Semiconductor |
SILICON PNP TRANSISTOR | |
4 | BC393 |
Seme LAB |
Bipolar PNP Device | |
5 | BC393 |
CDIL |
SILICON PLANAR TRANSISTORS | |
6 | BC300 |
CDIL |
(BC300 - BC302) NPN EPITAXIAL PLANAR SILICON TRANSISTORS | |
7 | BC300 |
Micro Electronics |
NPN Silicon Transistor | |
8 | BC301 |
CDIL |
(BC300 - BC302) NPN EPITAXIAL PLANAR SILICON TRANSISTORS | |
9 | BC301 |
Micro Electronics |
NPN Silicon Transistor | |
10 | BC302 |
CDIL |
(BC300 - BC302) NPN EPITAXIAL PLANAR SILICON TRANSISTORS | |
11 | BC302 |
Seme LAB |
Bipolar NPN Device | |
12 | BC302 |
Micro Electronics |
NPN Silicon Transistor |