Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Power Dissipation @ Ta=25ºC Derate Above 25ºC Power Dissipation @ Tc=25ºC Derate Above 25ºC Operating and Storage Junction Temperature Range SYMBOL VCEO VCBO VEBO IC PD PD Tj, Tstg BC393 180 180 6 0.50 0.40 2.27 1.40 8.00 - 65 to +200 THERMAL CHARACTERISTIC.
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The BC393 is a silicon planar epitaxial PNP transistor in Jedec TO-18 metal case, designed for general purpose high-volt.
MAXIMUM RATINGS, Rating Collector-Emitter Voltage Cotlector-Base Voltage Emitter-Base Voltage Collector Current - Contin.
The CENTRAL SEMICONDUCTOR BC393 is a silicon PNP transistor designed for general purpose amplifier applications. MARKIN.
BC393 Dimensions in mm (inches). 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar PNP Device in a Hermetica.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BC394 |
STMicroelectronics |
HIGH VOLTAGE AMPLIFIER | |
2 | BC394 |
CDIL |
SILICON PLANAR TRANSISTORS | |
3 | BC394 |
Motorola |
HIGH VOLTAGE TRANSISTOR | |
4 | BC300 |
CDIL |
(BC300 - BC302) NPN EPITAXIAL PLANAR SILICON TRANSISTORS | |
5 | BC300 |
Micro Electronics |
NPN Silicon Transistor | |
6 | BC301 |
CDIL |
(BC300 - BC302) NPN EPITAXIAL PLANAR SILICON TRANSISTORS | |
7 | BC301 |
Micro Electronics |
NPN Silicon Transistor | |
8 | BC302 |
CDIL |
(BC300 - BC302) NPN EPITAXIAL PLANAR SILICON TRANSISTORS | |
9 | BC302 |
Seme LAB |
Bipolar NPN Device | |
10 | BC302 |
Micro Electronics |
NPN Silicon Transistor | |
11 | BC303 |
Micro Electronics |
PNP Silicon Transistor | |
12 | BC303 |
Seme LAB |
Bipolar PNP Device |