MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BC372/D High Voltage Darlington Transistors NPN Silicon COLLECTOR 3 BASE 2 BC372 BC373 1 2 EMITTER 1 3 CASE 29–04, STYLE 1 TO–92 (TO–226AA) MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipa.
or
– Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter
– Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 80 Vdc, IE = 0) (VCB = 60 Vdc, IE = 0) Emitter Cutoff Current (VEB = 10 V, IC = 0) 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%. BC372 BC373 IEBO V(BR)CES BC372 BC373 V(BR)CBO BC372 BC373 V(BR)EBO ICBO — — — — — — 100 100 100 nAdc 100 80 12 — — — — — — Vdc nAdc 100 80 — — — — Vdc Vdc
Motorola Small
–Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1996
1
BC372 BC373
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Co.
BC372, BC373 High Voltage Darlington Transistors NPN Silicon Features http://onsemi.com COLLECTOR 3 BASE 2 Symbol VCEO B.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BC372 |
Motorola Inc |
High Voltage Darlington Transistors | |
2 | BC372 |
ON Semiconductor |
High Voltage Darlington Transistors | |
3 | BC377 |
SEME-LAB |
Bipolar NPN Device | |
4 | BC377 |
SGS-Ates |
Silicon Planar NPN Transistor | |
5 | BC3770 |
NXP |
2.0A switch-mode charger | |
6 | BC378 |
Seme LAB |
Bipolar NPN Device | |
7 | BC378 |
SGS-Ates |
Silicon Planar NPN Transistor | |
8 | BC300 |
CDIL |
(BC300 - BC302) NPN EPITAXIAL PLANAR SILICON TRANSISTORS | |
9 | BC300 |
Micro Electronics |
NPN Silicon Transistor | |
10 | BC301 |
CDIL |
(BC300 - BC302) NPN EPITAXIAL PLANAR SILICON TRANSISTORS | |
11 | BC301 |
Micro Electronics |
NPN Silicon Transistor | |
12 | BC302 |
CDIL |
(BC300 - BC302) NPN EPITAXIAL PLANAR SILICON TRANSISTORS |