BC373 |
Part Number | BC373 |
Manufacturer | Motorola Inc |
Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BC372/D High Voltage Darlington Transistors NPN Silicon COLLECTOR 3 BASE 2 BC372 BC373 1 2 EMITTER 1 3 CASE 29–04, STYLE 1 TO–92 (T... |
Features |
or – Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 80 Vdc, IE = 0) (VCB = 60 Vdc, IE = 0) Emitter Cutoff Current (VEB = 10 V, IC = 0) 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%. BC372 BC373 IEBO V(BR)CES BC372 BC373 V(BR)CBO BC372 BC373 V(BR)EBO ICBO — — — — — — 100 100 100 nAdc 100 80 12 — — — — — — Vdc nAdc 100 80 — — — — Vdc Vdc Motorola Small –Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1996 1 BC372 BC373 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Co... |
Document |
BC373 Data Sheet
PDF 107.51KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BC372 |
Motorola Inc |
High Voltage Darlington Transistors | |
2 | BC372 |
ON Semiconductor |
High Voltage Darlington Transistors | |
3 | BC373 |
ON Semiconductor |
High Voltage Darlington Transistors | |
4 | BC377 |
SEME-LAB |
Bipolar NPN Device | |
5 | BC377 |
SGS-Ates |
Silicon Planar NPN Transistor |