SYMBOL BC212 BC213 BC214 UNITS Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Power Dissipation @ Ta=25ºC Derate Above 25ºC Power Dissipation @ Tc=25ºC Derate Above 25ºC Operating And Storage Junction Temperature Range THERMAL RESISTANCE Junction to ambient Junction to case VCEO VCBO VEBO IC PD PD Tj, .
, BC213A, BC213B, BC213C BC214, BC214B, BC214C TO-92 Plastic Package ELECTRICAL CHARACTERISTICS (Ta=25ºC Unless Specified Otherwise) DESCRIPTION SYMBOL TEST CONDITION MIN Collector Emitter Voltage VCEO IC=2mA,IB=0 BC212 50 BC213, BC214 30 Collector Base Voltage VCBO IC=10µA.IE=0 BC212 60 BC213, BC214 45 Emitter Base Voltage VEBO IE=10µA, IC=0 5 Collector Cut off Current ICBO VCB=30V,IE=0 Emitter Cut off Current IEBO VEB=4V, IC=0 DC Current Gain BC212, BC213 hFE IC=10µA,VCE=5V 40 BC214 100 BC212 IC=2mA,VCE=5V 60 BC213 80 BC214 140 BC212, BC214 IC=100mA,VCE=.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BC213 |
CDIL |
PNP Transistor | |
2 | BC213 |
Fairchild |
Process 63 PNP Medium Power Transistor | |
3 | BC213 |
Motorola |
Amplifier PNP Transistors | |
4 | BC213 |
Micro Electronics |
Transistor | |
5 | BC213A |
CDIL |
PNP Transistor | |
6 | BC213B |
CDIL |
PNP Transistor | |
7 | BC213L |
Fairchild |
PNP Transistor | |
8 | BC213L |
Micro Electronics |
Transistor | |
9 | BC2102 |
Holtek Semiconductor |
Sub-1GHz OOK/FSK Transmitter | |
10 | BC211 |
Tesla Elektronicke |
Transistor | |
11 | BC212 |
Central Semiconductor |
SILICON PNP TRANSISTORS | |
12 | BC212 |
CDIL |
PNP Transistor |