BC212 PNP Silicon Epitaxial Planar Transistor for general purpose amplifier Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Range Characteristics at Ta = 25 OC Parameter DC Current Gain at -VCE = 5 V, -IC =.
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The CENTRAL SEMICONDUCTOR BC212 series are silicon PNP transistors designed for low noise, high gain amplifier applicat.
SYMBOL BC212 BC213 BC214 UNITS Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Curre.
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors Order this document by BC212/D PNP Silicon COLLECTOR 3 2 .
Elektronische Bauelemente BC212 -0.1A , -60V PNP Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BC2102 |
Holtek Semiconductor |
Sub-1GHz OOK/FSK Transmitter | |
2 | BC211 |
Tesla Elektronicke |
Transistor | |
3 | BC212A |
Central Semiconductor |
SILICON PNP TRANSISTORS | |
4 | BC212A |
CDIL |
PNP Transistor | |
5 | BC212B |
CDIL |
PNP Transistor | |
6 | BC212B |
Motorola |
Amplifier PNP Transistors | |
7 | BC212B |
ON Semiconductor |
Amplifier Transistors | |
8 | BC212B |
Fairchild Semiconductor |
PNP General Purpose Amplifier | |
9 | BC212B |
Central Semiconductor |
SILICON PNP TRANSISTORS | |
10 | BC212L |
Fairchild |
PNP General Purpose Amplifier | |
11 | BC212L |
Micro Electronics |
COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTOR | |
12 | BC213 |
CDIL |
PNP Transistor |