Silicon Tuning Diode BB 835 Preliminary data Features q Extended frequency range up to 2.8 Ghz ; special design for use in TV-sat indoor units High capacitance ratio q Type BB 835 Marking yellow X Ordering Code (tape and reel) Q62702-B802 Pin Configuration 1 C 2 A Package SOD-323 Maximum Ratings Parameter Reverse voltage Reverse voltage Forward cu.
q
Extended frequency range up to 2.8 Ghz ; special design for use in TV-sat indoor units High capacitance ratio
q
Type BB 835
Marking yellow X
Ordering Code (tape and reel) Q62702-B802
Pin Configuration 1 C 2 A
Package SOD-323
Maximum Ratings Parameter Reverse voltage Reverse voltage Forward current Operating temperature range Storage temperature range Thermal Resistance Junction - ambient 1)
Rth JA
Symbol
VR
Values 30 35 20
– 55… +150
– 55… +150 ≤ 450
Unit V V mA °C °C
(R ≥ 5 kΩ)
VRM IF TOP Tstg
K/W
1)
For detailed informatioon see chapter Package Outline
Semiconductor Group
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BB831 |
Siemens Group |
Silicon Variable Capacitance Diode | |
2 | BB831 |
Infineon Technologies AG |
Silicon Variable Capacitance Diodes | |
3 | BB833 |
Siemens Group |
Silicon Tuning Diode | |
4 | BB833 |
Infineon Technologies AG |
Silicon Tuning Diodes | |
5 | BB837 |
Siemens Group |
Silicon Tuning Diode | |
6 | BB837 |
Infineon Technologies AG |
Silicon Tuning Diode | |
7 | BB804 |
Philipss |
VHF variable capacitance double diode | |
8 | BB804 |
Vishay Telefunken |
Silicon Epitaxial Planar Dual Capacitance Diode | |
9 | BB804 |
Siemens Group |
Silicon Variable Capacitance Diode | |
10 | BB804 |
Infineon Technologies AG |
Silicon Variable Capacitance Diode | |
11 | BB809 |
Philipss |
VHF variable capacitance diode | |
12 | BB811 |
Siemens Group |
Silicon Variable Capacitance Diode |