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BB 811 Silicon Variable Capacitance Diode q BB 811 Frequency range up to 2 GHz; special design for use in TV-sat indoor units Type BB 811 Marking white T Ordering Code (tape and reel) Q62702-B478 Pin Configuration Package1) SOD-123 Maximum Ratings Parameter Reverse voltage Forward current, TA ≤ 60 ˚C Operating temperature range Storage temperature r.
CT
Values typ.
–
– 8.8 1.02 8.6 1 0.1
– 2.8 max.
Unit nA 20 500 pF 9.8 1.2 9.5
–
– 3
–
– Ω pF % nH
7.8
–
–
–
–
C T LS
Diode capacitance CT = f (VR) f = 1 MHz
Semiconductor Group
2
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BB814 |
Vishay Telefunken |
Silicon Epitaxial Planar Dual Capacitance Diode |
|
| 2 | BB814 |
Siemens Group |
Silicon Variable Capacitance Diode |
|
| 3 | BB814 |
Infineon Technologies AG |
Silicon Variable Capacitance Diodes |
|
| 4 | BB804 |
Philipss |
VHF variable capacitance double diode |
|
| 5 | BB804 |
Vishay Telefunken |
Silicon Epitaxial Planar Dual Capacitance Diode |
|
| 6 | BB804 |
Siemens Group |
Silicon Variable Capacitance Diode |
|
| 7 | BB804 |
Infineon Technologies AG |
Silicon Variable Capacitance Diode |
|
| 8 | BB809 |
Philipss |
VHF variable capacitance diode |
|
| 9 | BB824 |
Vishay Telefunken |
Silicon Epitaxial Planar Dual Capacitance Diode |
|
| 10 | BB824-V-GH |
Vishay Siliconix |
Dual Varicap Diode |
|
| 11 | BB831 |
Siemens Group |
Silicon Variable Capacitance Diode |
|
| 12 | BB831 |
Infineon Technologies AG |
Silicon Variable Capacitance Diodes |
|