BB824 - Vishay Telefunken

BB824 Silicon Epitaxial Planar Dual Capacitance Diode

BB824 Vishay Telefunken Silicon Epitaxial Planar Dual Capacitance Diode Features D Common cathode D High capacitance ratio Applications Tuning of separate resonant circuits, push–pull circuits in FM range, for car radios 94 8550 Absolute Maximum Ratings Tj = 25_C Parameter Repetitive peak reverse voltage Reverse voltage Forward current Junction temperatur.

Features

D Common cathode D High capacitance ratio Applications Tuning of separate resonant circuits, push
  –pull circuits in FM range, for car radios 94 8550 Absolute Maximum Ratings Tj = 25_C Parameter Repetitive peak reverse voltage Reverse voltage Forward current Junction temperature Storage temperature range Test Conditions Type Symbol VRRM VR IF Tj Tstg Value 20 18 50 125
  –55...+150 Unit V V mA °C °C Electrical Characteristics Tj = 25_C Parameter Reverse current Diode capacitance 1) Test Conditions VR=16V VR=16V, Tj=60°C VR=2V VR=8V Capacitance ratio Series resistance 1) Type Group 2 Group 3 G.