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BB101M |
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| Part Number | BB101M |
| Manufacturer | Hitachi |
| Description | BB101M Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-504 1st. Edition Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF... |
| Features |
• Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 2.0 dB typ. at f = 900 MHz) • Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200 V at C = 200 pF, Rs = 0 conditions. Outline MPAK-4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain BB101M Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate 1 to source voltage Gate 2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol VDS VG1S VG2S ID Pch Tch Tstg Ratings 6 +6 –0 ±6 25 150 150 –55 to +150 Unit V V... |
| Document |
 BB101M Data Sheet
PDF 48.11KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BB101C |
Hitachi |
Build in Biasing Circuit MOS FET IC UHF RF Amplifier |
|
| 2 | BB102C |
Hitachi |
Build in Biasing Circuit MOS FET IC UHF RF Amplifier |
|
| 3 | BB102M |
Hitachi |
Build in Biasing Circuit MOS FET IC UHF RF Amplifier |
|
| 4 | BB105 |
Iskra Semic |
Silicon Planar Signal Diodes |
|
| 5 | BB105A |
Tele Fun Ken |
(BB105A/B/G) Diodes |
|