BAT 68W Silicon Schottky Diodes Preliminary data • For mixer applications in the VHF/UHF range • For high speed switching BAT 68-04W BAT68-05W BAT68-06W Type BAT 68-04W BAT 68-05W BAT 68-06W BAT 68W Marking Ordering Code 84s 85s 86s 83s Q62702Q62702Q62702Q62702- Pin Configuration 1 = A1 1 = A1 1 = K1 1=A 2 = K2 2 = A2 2 = K2 n.c. Package 3 = K1/A2 SOT.
Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol min. DC characteristics Breakdown voltage Values typ. max. Unit
V(BR)
8 318 390 -
V µA 0.1 1.2 mV 340 340 500 pF 1 Ω 10
I(BR) = 100 µA
Reverse current
IR
VR = 1 V, TA = 25 °C VR = 1 V, TA = 60 °C
Forward voltage
VF
IF = 1 mA IF = 10 mA
Diode capacitance
CT RF
VR = 1 V, f = 1 MHz
Differential forward resistance
IF = 5 mA
Forward current IF = f (TA
*;TS) BAT 68W
200 mA
Forward current IF = f (TA
*;TS) BAT 68-04W, -05W, -06W
200 mA
*): mounted on alumina 15mm x 16.7mm x 0.7mm
*): mounted on alumina 15mm.
Silicon Schottky Diodes • For mixer applications in the VHF / UHF range • For high-speed switching applications • Pb-fre.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BAT68-06 |
Siemens Semiconductor Group |
Silicon Schottky Diodes | |
2 | BAT68-06 |
Infineon Technologies AG |
Silicon Schottky Diodes | |
3 | BAT68-02L |
Infineon Technologies AG |
Silicon Schottky Diodes | |
4 | BAT68-03 |
Siemens Semiconductor Group |
Silicon Schottky Diode | |
5 | BAT68-03W |
Siemens Semiconductor Group |
Silicon Schottky Diode | |
6 | BAT68-04 |
Siemens Semiconductor Group |
Silicon Schottky Diodes | |
7 | BAT68-04 |
Infineon Technologies AG |
Silicon Schottky Diodes | |
8 | BAT68-04W |
Siemens Semiconductor Group |
Silicon Schottky Diodes | |
9 | BAT68-04W |
Infineon Technologies AG |
Silicon Schottky Diodes | |
10 | BAT68-05 |
Siemens Semiconductor Group |
Silicon Schottky Diodes | |
11 | BAT68-05 |
Infineon Technologies AG |
Silicon Schottky Diodes | |
12 | BAT68-05W |
Siemens Semiconductor Group |
Silicon Schottky Diodes |