Silicon Schottky Diodes q q BAT 68 … For mixer applications in the VHF/UHF range For high-speed switching ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BAT 68 BAT 68-04 Marking 83 84 Ordering Code Pin Configuration (tape and reel) Q62702-A926 Q62702-A4 Package1) SOT-23 BAT 68-05 85 Q62702-A15 BAT 68-06 86 Q62702-A.
– 55 … + 150
Unit V mA mW ˚C
750 590
K/W
1) 2)
For detailed information see chapter Package Outlines. Package mounted on alumina 15 mm × 16.7 mm × 0.7 mm.
Semiconductor Group
2
BAT 68 …
Electrical Characteristics per Diode at TA = 25 ˚C, unless otherwise specified. Parameter Breakdown voltage IR = 10 µA Reverse current VR = 1 V VR = 1 V, TA = 60 ˚C Forward voltage 1) IF = 1 mA IF = 10 mA Diode capacitance VR = 0, f = 1 MHz Differential forward resistance IF = 5 mA, f = 10 kHz Symbol min. VBR IR
–
– VF
–
– CT rf
–
–
–
–
–
– 340 500 1 10 pF Ω
–
– 0.1 1.2 mV 8 Values typ.
– max.
– V
µA
.
BAT68... Silicon Schottky Diodes For mixer applications in the VHF / UHF range For high-speed switching applications.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BAT68-02L |
Infineon Technologies AG |
Silicon Schottky Diodes | |
2 | BAT68-03 |
Siemens Semiconductor Group |
Silicon Schottky Diode | |
3 | BAT68-03W |
Siemens Semiconductor Group |
Silicon Schottky Diode | |
4 | BAT68-04 |
Siemens Semiconductor Group |
Silicon Schottky Diodes | |
5 | BAT68-04 |
Infineon Technologies AG |
Silicon Schottky Diodes | |
6 | BAT68-04W |
Siemens Semiconductor Group |
Silicon Schottky Diodes | |
7 | BAT68-04W |
Infineon Technologies AG |
Silicon Schottky Diodes | |
8 | BAT68-05W |
Siemens Semiconductor Group |
Silicon Schottky Diodes | |
9 | BAT68-05W |
Infineon Technologies AG |
Silicon Schottky Diodes | |
10 | BAT68-06 |
Siemens Semiconductor Group |
Silicon Schottky Diodes | |
11 | BAT68-06 |
Infineon Technologies AG |
Silicon Schottky Diodes | |
12 | BAT68-06W |
Siemens Semiconductor Group |
Silicon Schottky Diodes |