MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BAS40LT1/D Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applicatio.
V) Forward Voltage (IF = 0.1 mAdc) Forward Voltage (IF = 30 mAdc) Forward Voltage (IF = 100 mAdc) Symbol V(BR)R CT IR VF VF VF Min 40 — — — — — Max — 5.0 1.0 380 500 1.0 Unit Volts pF µAdc mVdc mVdc Vdc
Preferred devices are Motorola recommended choices for future use and best overall value.
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REV 1
Motorola Small
–Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1997
1
BAS40LT1
100 IF, FORWARD CURRENT (mA) IR , REVERSE CURRENT (µA) 100 TA = 150°C 125°C 85°C
10
10
1.0
150°C 1.0 1 25°C 85°C 25°C 0.1 0 0.1 0.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BAS40L |
nexperia |
General-purpose Schottky diodes | |
2 | BAS40L |
NXP |
Schottky barrier diode | |
3 | BAS40L |
ON Semiconductor |
Schottky Barrier Diodes | |
4 | BAS40LP |
Diodes |
SURFACE MOUNT SCHOTTKY BARRIER DIODE | |
5 | BAS40LP |
GOOD-ARK |
Schottky Barrier Diode | |
6 | BAS40 |
Multicomp |
Surface Mount Barrier Diode | |
7 | BAS40 |
DIODES |
SURFACE-MOUNT SCHOTTKY BARRIER DIODE | |
8 | BAS40 |
nexperia |
General-purpose Schottky diodes | |
9 | BAS40 |
UTC |
SCHOTTKY BARRIER DIODES | |
10 | BAS40 |
TAITRON |
Multiple Terminals SMD Schottky Diodes | |
11 | BAS40 |
Power Silicon |
SURFACE MOUNT SCHOTTKY DIODES | |
12 | BAS40 |
WILLAS |
200mW Plastic-Encapsulate Schottky Barrier Diodes |