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BAS40L Schottky Barrier Diodes

SOT−23 (TO−236) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 2 onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsem.

Features


• S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage Forward Power Dissipation @ TA = 25°C Derate above 25°C VR 40 V PF 225 mW 1.8 mW/°C Operating Junction and Storage TJ, Tstg −55 to +150 °C Temperature Range Forward Continuous Current IF 120 mA Forward Surge Current tv1s t v 10 ms IFSM mA 200 600 Thermal Resistance (Note 1) Junction−to−Ambient (Note.

The same part from a different manufacturer

Datasheet BAS40L - nexperia BAS40L

General-purpose Schottky diodes in small Surface-Mounted Device (SMD) plastic packages. Table 1. Product overview Type.

Datasheet BAS40L - NXP BAS40L

Planar Schottky barrier diode with an integrated guard ring for stress protection. Encapsulated in a SOD882 leadless ult.

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