MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BAS21LT1/D High Voltage Switching Diode 3 CATHODE 1 ANODE BAS21LT1 Motorola Preferred Device MAXIMUM RATINGS Rating Continuous Reverse Voltage Peak Forward Current Peak Forward Surge Current Symbol VR IF IFM(surge) Value 250 200 625 Unit Vdc mAdc mAdc 1 2 3 CASE 318 – 08, STYLE 8 SOT– 23 (TO.
verse Breakdown Voltage (IBR = 100 µAdc) Forward Voltage (IF = 100 mAdc) (IF = 200 mAdc) Diode Capacitance (VR = 0, f = 1.0 MHz) Reverse Recovery Time (IF = IR = 30 mAdc, RL = 100 Ω) 1. FR
– 5 = 1.0 0.75 2. Alumina = 0.4 0.3 IR — — V(BR) VF — — CD trr — — 1000 1250 5.0 50 pF ns 250 1.0 100 — Vdc mV µAdc
0.062 in. 0.024 in. 99.5% alumina.
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola Small
–Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1996
1
BAS21LT1
820 Ω +1.
www.DataSheet4U.com BAS19LT1, BAS20LT1, BAS21LT1, BAS21DW5T1 Preferred Devices High Voltage Switching Diode Features .
SWITCHING DIODE RoHS BAS21LT1 Features Power dissipation PD : 225 mW (Tamb=25 C) Pluse Drain DIF : 200 mA TReverse Vo.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BAS21L |
ON Semiconductor |
High Voltage Switching Diode | |
2 | BAS21LD |
nexperia |
High-voltage switching diode | |
3 | BAS21LL |
nexperia |
High-voltage switching diode | |
4 | BAS21 |
CYStech Electronics |
High voltage switching (double) diodes | |
5 | BAS21 |
Sangdest Microelectronics |
SWITCHING DIODE | |
6 | BAS21 |
Taiwan Semiconductor |
225mW SMD Switching Diode | |
7 | BAS21 |
NXP |
General purpose diodes | |
8 | BAS21 |
Diodes Incorporated |
SURFACE MOUNT FAST SWITCHING DIODE | |
9 | BAS21 |
Vishay Telefunken |
Surface Mount Switching Diode | |
10 | BAS21 |
GOOD-ARK |
Switching Diode | |
11 | BAS21 |
Infineon Technologies AG |
Silicon Switching Diodes | |
12 | BAS21 |
Diotec Semiconductor |
Surface Mount Silicon Planar Small-Signal Diode |