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BAS21LT1 |
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| Part Number | BAS21LT1 |
| Manufacturer | WEJ |
| Description | SWITCHING DIODE RoHS BAS21LT1 Features Power dissipation PD : 225 mW (Tamb=25 C) Pluse Drain DIF : 200 mA TReverse Voltage VR : 250V .,LOperating and storage junction temperature range Tj, Tstg : -... |
| Features |
Power dissipation PD : 225 mW (Tamb=25 C)
Pluse Drain
DIF : 200 mA TReverse Voltage
VR : 250V
.,LOperating and storage junction temperature range Tj, Tstg : -55 C to +150 C
1
1.
2.4 1.3
SOT-23
3
2 1.BASE 2.EMITTER 3.COLLECTOR
COANODE-CATHODE 3 IC1 2 ANODE CATHODE
Marking:JS
2.9 1.9 0.95 0.95 0.4
Unit:mm
ONElectro-Optical Characteristics
RParameter
Symbol
TReverse breakdown voltage
V(BR)
CReverse Voltage leakage current
IR
EForward Voltage LDiode Capacitance WEJ EReverse Recovery Time
VF CD trr
Test Condition
IR=100 A
VR=200V IF=100mA IF=200mA VR=0V f=1MHz
(Ta=25 C)
MIN. MAX. U... |
| Document |
 BAS21LT1 Data Sheet
PDF 90.00KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BAS21LT1 |
Motorola Inc |
CASE 318 08/ STYLE 8 SOT 23 (TO 236AB) |
|
| 2 | BAS21LT1 |
ON Semiconductor |
(BAS19LT1 - BAS21xxx1) High Voltage Switching Diode |
|
| 3 | BAS21L |
ON Semiconductor |
High Voltage Switching Diode |
|
| 4 | BAS21LD |
nexperia |
High-voltage switching diode |
|
| 5 | BAS21LL |
nexperia |
High-voltage switching diode |
|