B1416 - Panasonic

B1416 2SB1416

Power Transistors 2SB1416 Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SD2136 3.8±0.2 Unit: mm 7.5±0.2 4.5±0.2 ■ Features • High forward current transfer ratio hFE which has satisfactory linearity • Low collector-emitter saturation voltage VCE(sat) • Allowing automatic insertion with radial taping 10.8±0.2 0..

Features

• High forward current transfer ratio hFE which has satisfactory linearity
• Low collector-emitter saturation voltage VCE(sat)
• Allowing automatic insertion with radial taping 10.8±0.2 0.65±0.1 2.5±0.1 0.85±0.1 1.0±0.1 0.8 C 90˚ 0.8 C 16.0±1.0 0.7±0.1 0.7±0.1 1.15±0.2 1.15±0.2
■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Ra.