B1411 - Toshiba

B1411 SILICON PNP TRIPLE DIFFUSED TYPE TRANSISTOR

TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1411 Switching Applications Hammer Drive, Pulse Motor Drive Applications 2SB1411 Unit: mm • High DC current gain: hFE = 1500 (min) (VCE = −3 V, IC = −1 A) • Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −1 A) Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collect.

Features

(i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Equivalent Circuit Collector Base ≈ 7 kΩ ≈ 150 Ω Emitter 1 2006-11-21 Electrical Characteristics (Tc = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emit.