B130NS04ZB - STMicroelectronics

B130NS04ZB N-Channel MOSFET

This fully clamped MOSFET is produced using ST’s latest advanced Mesh overlay process, which is based on an innovative strip layout. The inherent benefits of the new technology coupled with the extra clamping capabilities make this product particularly suitable for the harshest operation conditions, such as those encountered in the automotive environment. Th.

Features

7$% Type VDS RDS(on) max. ID STB130NS04ZB-1 Clamped 9 mΩ 80 A ,3$.  Figure 1. Internal schematic diagram
• Designed for automotive applications and AEC-Q101 qualified
• 100% avalanche tested
• Low capacitance and gate charge
• 175°C maximum junction temperature Applications
• High switching current
• Linear applications Description This fully clamped MOSFET is produced using ST’s latest advanced Mesh overlay process, which is based on an innovative strip layout. The inherent benefits of the new technology coupled with the extra clamping capabilities make this product particularly.