·With TO-220 package ·Low collector saturation voltage APPLICATIONS ·Designed for use in low frequency power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Product Specification 2SB1273 Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER VCBO Collector.
tter breakdown voltage IC=-5mA ,RBE=: -60 V V(BR)CBO Collector-base breakdown voltage IC=-1mA ,IE=0 -60 V V(BR)EBO Emitter-base breakdown voltage IE=-1mA ,IC=0 -6 V VCEsat Collector-emitter saturation voltage IC=-2A; IB=-0.2A -0.4 -1.0 V VBE Base-emitter on voltage IC=-0.5A ; VCE=-5V -0.8 -1.0 V ICBO Collector cut-off current VCB=-40V; IE=0 -100 µA IEBO Emitter cut-off current VEB=-4V; IC=0 -100 µA hFE-1 DC current gain IC=-0.5A ; VCE=-5V 70 280 hFE-2 DC current gain IC=-3A ; VCE=-5V 20 COB Output capacitance IE=0 ; VCB=-10V,f=1MHz 60 pF fT Transition .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | B1270 |
Sanyo |
PNP/NPN Epitaxial Planar Type Silicon Transistors | |
2 | B1271 |
Sanyo |
PNP/NPN Epitaxial Planar Type Silicon Transistors | |
3 | B1272 |
SavantIC |
2SB1272 | |
4 | B1274 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors | |
5 | B1274 |
SeCoS |
PNP Plastic Encapsulated Transistor | |
6 | B1277 |
Rohm |
2SB1277 | |
7 | B1277 |
FGX |
PNP Silison Transistor | |
8 | B1278 |
Rohm |
2SB1278 | |
9 | B120 |
Ferranti |
Low Voltage X-Ray Tube | |
10 | B120 |
Diodes Incorporated |
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER | |
11 | B120 |
Genesis Microchip |
highly integrated single chip interface controller | |
12 | B120-E3 |
Vishay |
Surface Mount Schottky Barrier Rectifier |