Ordering number:EN2267B PNP/NPN Epitaxial Planar Type Silicon Transistors 2SB1271/2SD1907 High-Current Switching Applications Applications · Suitable for relay drivers, high-speed inverters, converters, and other general high-current switching applications. Features · Suitable for sets whose height is restricted. · Low collector to emitter saturation volta.
· Suitable for sets whose height is restricted.
· Low collector to emitter saturation voltage.
· Large current capacity.
Package Dimensions
unit:mm 2049B
[2SB1271/2SD1907]
( ) : 2SB1271
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation
Symbol
VCBO VCEO VEBO
IC ICP PC
Junction Temperature Storage Temperature
Tj Tstg
Tc=25˚C
Conditions
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Collector Cutoff Current.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | B1270 |
Sanyo |
PNP/NPN Epitaxial Planar Type Silicon Transistors | |
2 | B1272 |
SavantIC |
2SB1272 | |
3 | B1273 |
SavantIC |
2SB1273 | |
4 | B1274 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors | |
5 | B1274 |
SeCoS |
PNP Plastic Encapsulated Transistor | |
6 | B1277 |
Rohm |
2SB1277 | |
7 | B1277 |
FGX |
PNP Silison Transistor | |
8 | B1278 |
Rohm |
2SB1278 | |
9 | B120 |
Ferranti |
Low Voltage X-Ray Tube | |
10 | B120 |
Diodes Incorporated |
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER | |
11 | B120 |
Genesis Microchip |
highly integrated single chip interface controller | |
12 | B120-E3 |
Vishay |
Surface Mount Schottky Barrier Rectifier |