B1241 - Rohm

B1241 2SB1241

Transistors 2SB1260 / 2SB1181 / 2SB1241 Power Transistor (−80V, −1A) 2SB1260 / 2SB1181 / 2SB1241 5.5−+00..13 1.5±0.3 0.9 1.5 2.5 9.5±0.5 !Features 1) High breakdown voltage and high current. BVCEO= −80V, IC=−1A 2) Good hFE linearity. 3) Low VCE(sat). 4) Complements the 2SD1898 / 2SD1863 / 2SD1733. !Structure Epitaxial planar type PNP silicon transistor .

Features

1) High breakdown voltage and high current. BVCEO= −80V, IC=−1A 2) Good hFE linearity. 3) Low VCE(sat). 4) Complements the 2SD1898 / 2SD1863 / 2SD1733. !Structure Epitaxial planar type PNP silicon transistor !External dimensions (Units : mm) 2SB1260 4.5+−00..12 1.6±0.1 1.5−+00..12 2SB1181 6.5±0.2 5.1+−00..12 C0.5 2.3+−00..12 0.5±0.1 0.5±0.1 4.0 ±0.3 2.5−+00..12 1.0±0.2 (1) (2) (3) 0.4±0.1 1.5±0.1 0.5±0.1 3.0±0.2 0.4±0.1 1.5±0.1 ROHM : MPT3 EIAJ : SC-62 Abbreviated ∗symbol: BH 0.4−+00..015 0.75 0.9 0.65±0.1 2.3±0.2 2.3±0.2 0.55±0.1 1.0±0.2 (1) Base (2) Collector (3) Emitter.