Transistors Medium power Transistor(*32V,*2A) 2SB1188 / 2SB1182 / 2SB1240 / 2SB822 / 2SB1277 / 2SB911M FFeatures 1) Low VCE(sat). VCE(sat) = *0.5V (Typ.) (IC / IB = *2A / *0.2A) 2) Complements the 2SD1766 / 2SD1758 / 2SD1862 / 2SD1189F / 2SD1055 / 2SD1919 / SD1227M. FExternal dimensions (Unit: mm) FStructure Epitaxial planar type PNP silicon transistor (.
1) Low VCE(sat).
VCE(sat) =
*0.5V (Typ.) (IC / IB =
*2A /
*0.2A) 2) Complements the 2SD1766 / 2SD1758 / 2SD1862 / 2SD1189F / 2SD1055 / 2SD1919 / SD1227M.
FExternal dimensions (Unit: mm)
FStructure Epitaxial planar type PNP silicon transistor
(96-131-B24)
215
Transistors
FAbsolute maximum ratings (Ta = 25_C)
2SB1188 / 2SB1182 / 2SB1240 / 2SB822 / 2SB1277 / 2SB911M
FElectrical characteristics (Ta = 25_C)
216
Transistors
FPackaging specifications and hFE
hFE values are classified as follows :
2SB1188 / 2SB1182 / 2SB1240 / 2SB822 / 2SB1277 / 2SB911M
FElectrical characteristic curves
217.
www.DataSheet4U.com 2SB1188 / 2SB1182 / 2SB1240 Transistors Medium power transistor (−32V, −2A) 2SB1188 / 2SB1182 / 2S.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | B1241 |
Rohm |
2SB1241 | |
2 | B1243 |
Rohm |
2SB1243 | |
3 | B120 |
Ferranti |
Low Voltage X-Ray Tube | |
4 | B120 |
Diodes Incorporated |
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER | |
5 | B120 |
Genesis Microchip |
highly integrated single chip interface controller | |
6 | B120-E3 |
Vishay |
Surface Mount Schottky Barrier Rectifier | |
7 | B120-M3 |
Vishay |
Surface Mount Schottky Barrier Rectifier | |
8 | B1200CALRP |
Littelfuse |
SIDACtor Protection Thyristors | |
9 | B1200CCLRP |
Littelfuse |
SIDACtor Protection Thyristors | |
10 | B1200W-F |
VIKING TECH |
Small Signal Schottky Diode | |
11 | B1200W-S |
CITC |
1A Surface Mount Schottky Barrier Rectifiers | |
12 | B1200W-ST |
CITC |
1A Surface Mount Schottky Barrier Rectifiers |