·With TO-126 package ·DARLINGTON ·High DC current gain ·Low collector saturation voltage APPLICATIONS ·For use in operating from IC without predriver ,such as hammer driver PINNING(See Fig.2) PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Product Specification 2SB1149 Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDI.
Esat Collector-emitter saturation voltage IC=-1.5A ;IB=-1.5mA VBEsat Base-emitter saturation voltage IC=-1.5A ;IB=-1.5mA ICBO Collector cut-off current VCB=-100V; IE=0 IEBO Emitter cut-off current VEB=-5V; IC=0 hFE-1 DC current gain IC=-1.5A ; VCE=-2V hFE-2 DC current gain IC=-3A ; VCE=-2V Switching times -0.9 -1.2 V -1.5 -2.0 V -10 µA -2.0 mA 2000 15000 1000 ton Turn-on time tstg Storage time tf Fall time IC=-1.5A ; IB1=-IB2=-1.5mA VCC?-40V;RL=27B 0.5 µs 2.0 µs 1.0 µs hFE-1 Classifications ML K 2000-5000 3000-7000 5000-15000 2 SavantIC Semiconductor Silicon PNP .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | B1140 |
Sanyo Semicon Device |
2SB1140 | |
2 | B1141 |
Sanyo |
2SB1141 | |
3 | B1143 |
Sanyo Semicon Device |
2SB1143 | |
4 | B1144 |
Sanyo Semicon Device |
2SB1144 | |
5 | B1148 |
Panasonic Semiconductor |
2SB1148 | |
6 | B110 |
Ferranti |
Low Voltage X-Ray Tube | |
7 | B1100 |
Diodes Incorporated |
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER | |
8 | B1100 |
CTC |
SCHOTTKY BARRIER RECTIFIERS | |
9 | B1100B |
Diodes Incorporated |
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER | |
10 | B1100BQ |
Diodes |
1.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER | |
11 | B1100CALRP |
Littelfuse |
SIDACtor Protection Thyristors | |
12 | B1100CCLRP |
Littelfuse |
SIDACtor Protection Thyristors |