B1148 - Panasonic Semiconductor

B1148 2SB1148

Power Transistors 2SB1148, 2SB1148A Silicon PNP epitaxial planar type For low-voltage switching Complementary to 2SD1752 and 2SD1752A 7.0±0.3 3.0±0.2 Unit: mm 3.5±0.2 7.2±0.3 0.8±0.2 s Features q Low collector to emitter saturation voltage VCE(sat) q High-speed switching q I type package enabling direct soldering of the radiating fin to the printed cir.

Features

q Low collector to emitter saturation voltage VCE(sat) q High-speed switching q I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. s Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Unit Collector to 2SB1148 base voltage 2SB1148A VCBO
  –40
  –50 V Collector to 2SB1148 emitter voltage 2SB1148A VCEO
  –20
  –40 V Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature VEBO ICP IC PC Tj Tstg
  –7
  –20
  –10.