Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this desig.
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AUIRLS4030 AUIRLSL4030
HEXFET® Power MOSFET
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Optimized for Logic Level Drive Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified
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G S
VDSS RDS(on) typ. max. ID
100V 3.4mΩ 4.3mΩ 180A
Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperatu.
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques t.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | AUIRLS3034 |
International Rectifier |
Power MOSFET | |
2 | AUIRLS3034-7P |
Infineon |
Power MOSFET | |
3 | AUIRLS3034-7P |
International Rectifier |
Power MOSFET | |
4 | AUIRLS3036 |
International Rectifier |
Power MOSFET | |
5 | AUIRLS3036-7P |
International Rectifier |
Power MOSFET | |
6 | AUIRLS3036-7P |
Infineon |
Power MOSFET | |
7 | AUIRLS4030 |
Infineon |
Power MOSFET | |
8 | AUIRLS4030 |
International Rectifier |
Power MOSFET | |
9 | AUIRLS4030-7P |
Infineon |
Power MOSFET | |
10 | AUIRLS4030-7P |
International Rectifier |
Power MOSFET | |
11 | AUIRLS8409-7P |
Infineon |
Power MOSFET | |
12 | AUIRL1404L |
Infineon |
Power MOSFET |