AUIRLS8409-7P - Infineon

AUIRLS8409-7P Power MOSFET

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design.

Features

 Advanced Process Technology
 Logic Level Gate Drive
 Ultra Low On-Resistance
 175°C Operating Temperature
 Fast Switching
 Repetitive Avalanche Allowed up to Tjmax
 Lead-Free, RoHS Compliant
 Automotive Qualified
* VDSS RDS(on) typ. max. ID (Silicon Limited) ID (Package Limited)     40V 0.50m 0.75m 500A 240A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast.