Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficie.
Advanced Planar Technology
Logic Level Gate Drive
Low On-Resistance
Dynamic dV/dT Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified
*
Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provide.
Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest pro.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | AUIRLR014N |
Infineon |
Power MOSFET | |
2 | AUIRLR014N |
International Rectifier |
HEXFET Power MOSFET | |
3 | AUIRLR024N |
Infineon |
Power MOSFET | |
4 | AUIRLR024N |
International Rectifier |
Power MOSFET | |
5 | AUIRLR024Z |
Infineon |
Power MOSFET | |
6 | AUIRLR024Z |
International Rectifier |
Power MOSFET | |
7 | AUIRLR2703 |
International Rectifier |
Power MOSFET | |
8 | AUIRLR2905 |
Infineon |
Power MOSFET | |
9 | AUIRLR2905 |
International Rectifier |
HEXFET Power MOSFET | |
10 | AUIRLR2905Z |
International Rectifier |
Power MOSFET | |
11 | AUIRLR2908 |
International Rectifier |
HEXFET Power MOSFET | |
12 | AUIRLR3105 |
International Rectifier |
Power MOSFET |