AUIRLR120N |
Part Number | AUIRLR120N |
Manufacturer | International Rectifier |
Description | Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit c... |
Features |
amage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V ID @ TC = 100°C Continuous Drain Current, VGS @ 10V IDM Pulsed Drain Current
Max.... |
Document |
AUIRLR120N Data Sheet
PDF 271.85KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | AUIRLR120N |
Infineon |
Power MOSFET | |
2 | AUIRLR014N |
Infineon |
Power MOSFET | |
3 | AUIRLR014N |
International Rectifier |
HEXFET Power MOSFET | |
4 | AUIRLR024N |
Infineon |
Power MOSFET | |
5 | AUIRLR024N |
International Rectifier |
Power MOSFET |