Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this desig.
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Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified
*
V(BR)DSS
75V 17.6mΩ 22mΩ
45A k 42A
RDS(on) typ.
G S
max.
ID (Silicon Limited) ID (Package Limited)
D
Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and im.
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques t.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | AUIRFR2307Z |
International Rectifier |
HEXFET Power MOSFET | |
2 | AUIRFR2405 |
International Rectifier |
Power MOSFET | |
3 | AUIRFR2407 |
International Rectifier |
Power MOSFET | |
4 | AUIRFR2905Z |
Infineon |
Power MOSFET | |
5 | AUIRFR2905Z |
International Rectifier |
HEXFET Power MOSFET | |
6 | AUIRFR024N |
International Rectifier |
Power MOSFET | |
7 | AUIRFR024N |
Infineon |
Power MOSFET | |
8 | AUIRFR1010Z |
International Rectifier |
Power MOSFET | |
9 | AUIRFR1018E |
International Rectifier |
Power MOSFET | |
10 | AUIRFR120Z |
Infineon |
Power MOSFET | |
11 | AUIRFR120Z |
International Rectifier |
Power MOSFET | |
12 | AUIRFR3504 |
Infineon |
Power MOSFET |