AUIRFR2405 - International Rectifier

AUIRFR2405 Power MOSFET

Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely ef.

Features

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● HEXFET® Power MOSFET D l l l l l l l Advanced Planar Technology Dynamic dV/dT Rating Low On-Resistance 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allow ed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified
* V(BR)DSS RDS(on) typ. max ID (Silicon Limited) 55V 11.8mΩ 16mΩ 56A 30A G S ID (Package Limited) D h Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with.