Low On-Resistance Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * V(BR)DSS RDS(on) typ. max. ID (Silicon Limited) 40V 4.3mΩ 5.5mΩ 120A 75A G S ID (Package Limited) k Specifically designed for Automotive applications, this HEX.
O O O O O O O O
AUIRF4104 AUIRF4104S
HEXFET® Power MOSFET
D
www.DataSheet4U.com Description
Low On-Resistance Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified
*
V(BR)DSS RDS(on) typ. max. ID (Silicon Limited)
40V 4.3mΩ 5.5mΩ 120A 75A
G S
ID (Package Limited)
k
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this d.
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques t.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | AUIRF4104 |
Infineon |
Power MOSFET | |
2 | AUIRF4104 |
International Rectifier |
Power MOSFET | |
3 | AUIRF4905 |
Infineon |
Power MOSFET | |
4 | AUIRF4905 |
International Rectifier |
Power MOSFET | |
5 | AUIRF4905L |
Infineon |
Power MOSFET | |
6 | AUIRF4905L |
International Rectifier |
Power MOSFET | |
7 | AUIRF4905S |
Infineon |
Power MOSFET | |
8 | AUIRF4905S |
International Rectifier |
Power MOSFET | |
9 | AUIRF1010EZ |
Infineon |
Power MOSFET | |
10 | AUIRF1010EZ |
International Rectifier |
Power MOSFET | |
11 | AUIRF1010EZL |
Infineon |
Power MOSFET | |
12 | AUIRF1010EZL |
International Rectifier |
Power MOSFET |