The AT68166FT is a 16Mbit SRAM packaged in a hermetic Multi Chip Module (MCM) for space applications. The AT68166FT MCM incorporates four 4Mbit AT60142FT SRAM dice. It can be organized as either one bank of 512Kx8, two banks of 512Kx16 or four banks of 512Kx8. It combines rad-hard capabilities, a latch-up threshold of 80MeV.cm²/mg, a Multiple Bit Upset immun.
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16 www.DataSheet4U.com Mbit SRAM Multi Chip Module Allows 32-, 16- or 8-bit access configuration Operating Voltage: 3.3V + 0.3V, 5V Tolerant Access Time:
– 25 ns, 20 ns
– 18 ns (preliminary information) Very Low Power Consumption
– Active: 595 mW per byte (Max) @ 20 ns(1), 415mW per byte (Max) @ 50ns(2)
– Standby: 15 mW (Typ) Military Temperature Range: -55 to +125°C TTL-Compatible Inputs and Outputs Asynchronous Die manufactured on Atmel 0.25 µm Radiation Hardened Process No Single Event Latch Up below LET Threshold of 80 MeV/mg/cm2 Tested up to a Total Dose of 3.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | AT68166F |
ATMEL Corporation |
Rad Hard 16 MegaBit 3.3V SRAM MultiChip Module | |
2 | AT68166G |
ATMEL Corporation |
Rad Hard 16 MegaBit 3.3V SRAM MultiChip Module | |
3 | AT681 |
Power Semiconductors |
PHASE CONTROL THYRISTOR | |
4 | AT681S60 |
Power Semiconductors |
PHASE CONTROL THYRISTOR | |
5 | AT6000 |
ATMEL |
Coprocessor Field Programmable Gate Arrays | |
6 | AT6002 |
ATMEL |
Coprocessor Field Programmable Gate Arrays | |
7 | AT6003 |
ATMEL |
Coprocessor Field Programmable Gate Arrays | |
8 | AT6005 |
ATMEL |
Coprocessor Field Programmable Gate Arrays | |
9 | AT6010 |
ATMEL |
Coprocessor Field Programmable Gate Arrays | |
10 | AT60142E |
ATMEL Corporation |
Rad Hard 512K x 8 Very Low Power CMOS SRAM | |
11 | AT60142ET |
ATMEL Corporation |
Rad Hard 512K x 8 Very Low Power CMOS SRAM | |
12 | AT603 |
Power Semiconductors |
PHASE CONTROL THYRISTOR |