The AT68166F/G is a 16Mbit SRAM packaged in a hermetic Multi Chip Module (MCM) for space applications. The AT68166F/G MCM incorporates four 4Mbit AT60142FT SRAM dice. It can be organized as either one bank of 512Kx8, two banks of 512Kx16 or four banks of 512Kx8. It combines rad-hard capabilities, a latch-up threshold of 80MeV.cm²/mg, a Multiple Bit Upset imm.
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16 www.DataSheet4U.com Mbit SRAM Multi Chip Module Allows 32-, 16- or 8-bit access configuration Operating Voltage: 3.3V + 0.3V Access Time
– 20 ns, 18 ns for AT68166F
– <18 ns for AT68166G (in development prototypes in Q4 2007) Power Consumption
– Active: 620 mW per byte (Max) @ 18ns - 415 mW per byte (Max) @ 50ns (1)
– Standby: 13 mW (Typ) Military Temperature Range: -55 to +125°C TTL-Compatible Inputs and Outputs Asynchronous Die manufactured on Atmel 0.25 µm Radiation Hardened Process No Single Event Latch Up below LET Threshold of 80 MeV/mg/cm2 Tested up to a.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | AT68166FT |
ATMEL Corporation |
Rad Hard 16 MegaBit 3.3V 5V Tolerant SRAM Mult | |
2 | AT68166G |
ATMEL Corporation |
Rad Hard 16 MegaBit 3.3V SRAM MultiChip Module | |
3 | AT681 |
Power Semiconductors |
PHASE CONTROL THYRISTOR | |
4 | AT681S60 |
Power Semiconductors |
PHASE CONTROL THYRISTOR | |
5 | AT6000 |
ATMEL |
Coprocessor Field Programmable Gate Arrays | |
6 | AT6002 |
ATMEL |
Coprocessor Field Programmable Gate Arrays | |
7 | AT6003 |
ATMEL |
Coprocessor Field Programmable Gate Arrays | |
8 | AT6005 |
ATMEL |
Coprocessor Field Programmable Gate Arrays | |
9 | AT6010 |
ATMEL |
Coprocessor Field Programmable Gate Arrays | |
10 | AT60142E |
ATMEL Corporation |
Rad Hard 512K x 8 Very Low Power CMOS SRAM | |
11 | AT60142ET |
ATMEL Corporation |
Rad Hard 512K x 8 Very Low Power CMOS SRAM | |
12 | AT603 |
Power Semiconductors |
PHASE CONTROL THYRISTOR |