AS6C6264A 8K x 8 BIT LOW POWER CMOS SRAM Datasheet

AS6C6264A 8K x 8 BIT LOW POWER CMOS SRAM

The AS6C6264A is a static RAM manufactured using a CMOS process technology with the following operating modes: - Read - Standby - Write - Data Retention The memory array is based on a 6transistor cell. The circuit is activated by the rising edge of E2 (at E1 = L), or the falling edge of E1 (at E2 = H). The address and control inputs open simultaneously. Acc.

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 8192 x 8 bit static CMOS RAM 70 ns Access Times Common data inputs and outputs Three-state outputs Typ. operating supply current o 70 ns: 10 mA Standby current: o < 2 μA at Ta ≤ 70 °C Data retention current at 2 V: o < 1 μA at Ta ≤ 70 °C TTL/CMOS-compatible Automatic reduction of power dissipation in long Read or Write cycles Power supply voltage 5 V Operating temperature ranges: o 0 to 70 °C o -40 to 85 °C ESD protection > 2000 V (MIL STD 883C M3015.7) Latch-up immunity > 100 mA Packages: PDIP28 (600 mil) SOP28 (330 mil) DESCRIPTION The AS6C6264A is a static RAM manuf.

No.	Partie #	Fabricant	Description
1	AS6C6264	Alliance Semiconductor	8K X 8 BIT LOW POWER CMOS SRAM
2	AS6C62256	Alliance Semiconductor	32K X 8 BIT LOW POWER CMOS SRAM
3	AS6C62256A	Alliance Semiconductor	32K x 8 BIT LOW POWER CMOS SRAM
4	AS6C6416-55BIN	Alliance Semiconductor	4M x 16 bit Low Power CMOS SRAM
5	AS6C1008	Alliance Semiconductor	128K X 8 BIT LOW POWER CMOS SRAM
6	AS6C1008L	Alliance Semiconductor	128k x 8 BIT SUPER LOW POWER CMOS SRAM
7	AS6C1016	Alliance Semiconductor	64K X 16 BIT LOW POWER CMOS SRAM
8	AS6C1616	Alliance Semiconductor	1024K X 16 BIT LOW POWER CMOS SRAM
9	AS6C1616A	Alliance Semiconductor	1024K X 16 BIT LOW POWER CMOS SRAM
10	AS6C2008	Alliance Semiconductor	256K X 8 BIT LOW POWER CMOS SRAM
11	AS6C2008A	Alliance Semiconductor	256K X 8 BIT LOW POWER CMOS SRAM
12	AS6C2016	Alliance Semiconductor	128K X 16 BIT LOW POWER CMOS SRAM

AS6C6264A - Alliance Semiconductor

AS6C6264A 8K x 8 BIT LOW POWER CMOS SRAM

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