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AS4C2M32SA-6TIN AS4C2M32SA-6TCN AS4C2M32SA-7TCN Revision History 64Mb SDRAM AS4C2M32SA - 86pin TSOP II PACKAGE Revision Details Rev 1.0 Preliminary datasheet Date September 2015 Alliance Memory Inc. 511 Taylor Way, San Carlos, CA 94070 TEL: (650) 610-6800 FAX: (650) 620-9211 Alliance Memory Inc. reserves the right to change products or specification witho.
• Fast access time: 5.4/5.4 ns
• Fast Clock rate: 166/143 MHz
• Fully synchronous operation
• Internal pipelined architecture
• Four internal banks (512K x 32bit x 4bank)
• Programmable Mode
- CAS Latency: 2 or 3 - Burst Length: 1, 2, 4, 8, or full page - Burst Type: Sequential or Interleaved - Burst-Read-Single-Write
• Burst stop function
• Individual byte controlled by DQM0-3
• Auto Refresh and Self Refresh
• Operating Temperature: - Commercial (0°C~+70°C) - Industrial (-40°C~+85 °C)
Overview
The 6.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | AS4C2M32SA-6TIN |
Alliance Semiconductor |
64Mb SDRAM |
|
| 2 | AS4C2M32SA-7TCN |
Alliance Semiconductor |
64Mb SDRAM |
|
| 3 | AS4C2M32S |
Alliance Semiconductor |
2M x 32 bit Synchronous DRAM |
|
| 4 | AS4C256K16E0 |
Alliance Semiconductor |
5V 256K x 16 CMOS DRAM |
|
| 5 | AS4C256K16FO |
Alliance Semiconductor |
5V 256K x 16 CMOS DRAM |
|
| 6 | AS4C256M16D3A-12BIN |
Alliance Semiconductor |
256M x 16 bit DDR3 Synchronous DRAM |
|
| 7 | AS4C256M16D3B-12BCN |
Alliance Semiconductor |
Double-data-rate architecture |
|
| 8 | AS4C256M16D3L |
Alliance Semiconductor |
256M x 16 bit DDR3L Synchronous DRAM |
|
| 9 | AS4C256M16D3LA-12BIN |
Alliance Semiconductor |
256M x 16 bit DDR3L Synchronous DRAM |
|
| 10 | AS4C256M16D3LB-12BAN |
Alliance Semiconductor |
4Gb DRAM |
|
| 11 | AS4C256M16D3LB-12BCN |
Alliance Semiconductor |
4Gb DRAM |
|
| 12 | AS4C256M16D3LB-12BIN |
Alliance Semiconductor |
4Gb DRAM |
|