The AS29LV400 is an 4 megabit, 3.0 volt Flash memory organized as 512Kbyte of 8 bits/256Kbytes of 16 bits each. For flexible Erase and Program capability, the 4 megabits of data is divided into eleven sectors: one 16K, two 8K, one 32K, and seven 64k byte sectors; or one 8K, two 4K, one 16K, and seven 32K word sectors. The ×8 data appears on DQ0–DQ7; the ×16 .
• Organization: 512Kx8/256Kx16
• Sector architecture
- One 16K; two 8K; one 32K; and seven 64K byte sectors - One 8K; two 4K; one 16K; and seven 32K word sectors - Boot code sector architecture—T (top) or B (bottom) - Erase any combination of sectors or full chip
• Single 2.7-3.6V power supply for read/write operations
• Sector protection
• High speed 70/80/90/120 ns address access time
• Automated on-chip programming algorithm - Automatically programs/verifies data at specified address
• Automated on-chip erase algorithm - Automatically preprograms/erases chip or specified
sectors
• Hardware .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | AS29LV016 |
Micross |
CMOS 3.0 Volt-Only Boot Sector Flash Memory | |
2 | AS29LV016 |
Austin Semiconductor |
16 Megabit (2M x 8-Bit / 1M x 16-Bit) CMOS 3.0 Volt-Only Boot Sector Flash Memory | |
3 | AS29LV016J |
Austin Semiconductor |
16 Megabit (2M x 8-Bit / 1M x 16-Bit) CMOS 3.0 Volt-Only Boot Sector Flash Memory | |
4 | AS29LV160 |
Alliance Semiconductor |
3V 2M x 8 / 1M x 16 CMOS Flash EEPROM | |
5 | AS29LV800 |
Alliance Semiconductor |
3V 1M x 8/512K x 16 CMOS Flash EEPROM | |
6 | AS2916 |
Si |
Primary Side PWM Controller | |
7 | AS2916 |
Astec Semiconductor |
PWM Controller | |
8 | AS29372 |
Micross Components |
Voltage Regulator | |
9 | AS29372 |
Austin Semiconductor |
LOW-DROPOUT VOLTAGE REGULATOR | |
10 | AS2950 |
Sipex |
(AS2950 / AS2951) 150mA Low Dropout Voltage Regulators | |
11 | AS2951 |
Sipex |
(AS2950 / AS2951) 150mA Low Dropout Voltage Regulators | |
12 | AS2954 |
Sipex Corporation |
250mA Low Drop Out Voltage Regulator |