AQW214EH - Panasonic

AQW214EH Photo MOS Relay

DIP8-pin type with reinforced insulation GE 2 Form A (AQW21❍EH) 9.86 .388 6.4 .252 9.86 .388 3.2 .126 6.4 .252 2.9 .114 (Height includes standoff) mm inch 18 27 36 45 RoHS compliant FEATURES 1. Reinforced insulation of 5,000 V More than 0.4 mm internal insulation distance between inputs and outputs. Con-forms to EN41003, EN60950 (reinforced insulat.

Features

1. Reinforced insulation of 5,000 V More than 0.4 mm internal insulation distance between inputs and outputs. Con-forms to EN41003, EN60950 (reinforced insulation). 2. Applicable for 2 Form A use as well as two independent 1 Form A use 3. Controls low-level analog signals PhotoMOS feature extremely low closedcircuit offset voltage to enable control of low-level analog signals without distortion. 4. High sensitivity and high speed response Can control max. 0.14 A load current with 5 mA input current. Fast operation speed of Typ. 0.5 ms (AQW210EH). 5. Low-level off state leakage current of max. .