DIP8-pin type with reinforced insulation GE 2 Form A (AQW21❍EH) 9.86 .388 6.4 .252 9.86 .388 3.2 .126 6.4 .252 2.9 .114 (Height includes standoff) mm inch 18 27 36 45 RoHS compliant FEATURES 1. Reinforced insulation of 5,000 V More than 0.4 mm internal insulation distance between inputs and outputs. Con-forms to EN41003, EN60950 (reinforced insulat.
1. Reinforced insulation of 5,000 V More than 0.4 mm internal insulation distance between inputs and outputs. Con-forms to EN41003, EN60950 (reinforced insulation). 2. Applicable for 2 Form A use as well as two independent 1 Form A use 3. Controls low-level analog signals PhotoMOS feature extremely low closedcircuit offset voltage to enable control of low-level analog signals without distortion. 4. High sensitivity and high speed response Can control max. 0.14 A load current with 5 mA input current. Fast operation speed of Typ. 0.5 ms (AQW210EH). 5. Low-level off state leakage current of max. .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | AQW210 |
Panasonic |
Photo MOS Relay | |
2 | AQW210 |
Global Components |
High Voltage Photo MOS Relays | |
3 | AQW210A |
Panasonic |
Photo MOS Relay | |
4 | AQW210A |
Global Components |
High Voltage Photo MOS Relays | |
5 | AQW210HL |
Panasonic |
Photo MOS Relay | |
6 | AQW210S |
Panasonic |
Photo MOS Relay | |
7 | AQW210S |
Etc |
HIGH VOLTAGE/ PHOTO MOS RELAY | |
8 | AQW210T2S |
NAIS |
(AQW210TS / AQW210T2S) Photo MOS Relays | |
9 | AQW210TS |
Etc |
HIGH VOLTAGE/ PHOTO MOS RELAY | |
10 | AQW210TS |
NAIS |
(AQW210TS / AQW210T2S) Photo MOS Relays | |
11 | AQW212 |
Panasonic |
Photo MOS Relay | |
12 | AQW212A |
Panasonic |
Photo MOS Relay |