AQV454A - NAiS

AQV454A Photo MOS Relay

(Standard type) TESTING (Standard type) PhotoMOSHE (High-function Economy) Type 1- Channel (Form B) Type RELAYS 
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8.8±0.05 .346±.002 6.4±0.05 .252±.002 3.9±0.2 .154±.008 8.8±0.05 .346±.002 1 2 3 
, 6.4±0.05 .252±.002 3.6±0.2 .142±.008 mm inch 6 5 4 FEATURES 1. Form B (Normally-closed) type Has been realized thanks to the built-i.

Features

1. Form B (Normally-closed) type Has been realized thanks to the built-in MOSFET processed by our proprietary method, DSD (Double-diffused and Selective Doping) method. Cross section of the normally-closed type of power MOS Passivation membrane Source electrode Gate electrode Intermediate insulating membrane N+ P+ N+ N+ P+ N+ Gate oxidation membrane N
  – N+ Drain electrode 2. Controls low-level analog signals PhotoMOS relays feature extremely low closed-circuit offset voltage to enable control of low-level analog signals without distortion. 3. High sensitivity, low ON resistance Can c.