AQV45, AQV454H 8.8 .346 6.4 .252 3.9 .154 8.8 .346 Height includes standoff CCAAD DDaattaa 6.4 .252 3.6 .142 mm inch 16 25 34 HE 1 Form B (AQV45, AQV454H)(Standard type) (Standard type) Normally closed DIP6-pin type Low on-resistance with 250V/400V load voltage HE 1 Form B (AQV45, AQV454H) FEATURES 1. 1 Form B (Normally-closed) type with low o.
1. 1 Form B (Normally-closed) type with low on-resistance This has been achieved thanks to the built-in MOSFET processed by our proprietary method, DSD (Doublediffused and Selective Doping) method. Cross section of the normally-closed type of power MOS Passivation membrane Source electrode Gate electrode Intermediate insulating membrane N+ P+ N+ N+ P+ N+ Gate oxidation membrane NN+ Drain electrode 2. Controls low-level analog signals PhotoMOS relays feature extremely low closed-circuit offset voltage to enable control of low-level analog signals without distortion. 3. High sensitiv.
(Standard type) TESTING (Standard type) PhotoMOSHE (High-function Economy) Type 1- Channel (Form B) Type RELAYS .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | AQV453 |
Panasonic |
Photo MOS Relay | |
2 | AQV453 |
NAiS |
Photo MOS Relay | |
3 | AQV454 |
Panasonic |
Photo MOS Relay | |
4 | AQV454 |
NAiS |
Photo MOS Relay | |
5 | AQV454A |
NAiS |
Photo MOS Relay | |
6 | AQV454A |
Panasonic |
Photo MOS Relay | |
7 | AQV454H |
Panasonic |
Photo MOS Relay | |
8 | AQV454H |
NAiS |
Photo MOS Relay | |
9 | AQV454HA |
NAiS |
Photo MOS Relay | |
10 | AQV454HA |
Panasonic |
Photo MOS Relay | |
11 | AQV410EH |
Panasonic |
Photo MOS Relay | |
12 | AQV412EH |
Panasonic |
Photo MOS Relay |